International Journal of Recent Trends in Engineering & Research

online ISSN

SNM AND READ STABILITY ANALYSIS OF 7TSRAM CELL ON 45NM TECHNOLOGY

Publication Date : 24/03/2016


Author(s) :

Mahendra Singh Rajput , Gunakesh Sharma.


Volume/Issue :
Volume 2
,
Issue 3
(03 - 2016)



Abstract :

This paper explains how the noise presence in SRAM cell affects the read stability of cell. The static noise margin SNM is effectively present in SRAM cell. The SNM changes various parameters of SRAM cell. SNM varies during each cell operation. The cell ratio, pull up ratio is also playing vital role in memory cell stability. This paper has analysis how SNM varies with the threshold voltage and supply voltage.


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