A REVIEW OF CARRIER MOBILITY AND DRAIN CURRENT ENHANCEMENT IN STRAINED Si CHANNEL MOSFET
Publication Date : 26/04/2016
Author(s) :
Volume/Issue :
Volume 2
,
Issue 4
(04 - 2016)
Abstract :
Abstract— As the time is going on the technology is growing with the devices small in size and better performance. There are several ways to improve performance of very large scale integrated (VLSI) circuits and to meet technology requirements. But one of the emerging trends in VLSI circuit is to use strained Si channel MOSFETs to achieve better performance. In this article we have reviewed various methodologies to induce strain in channel & their effect on physical structure and performance of device.
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