Effect of Mn concentration and strain on the band structure of GaMnAs: Theoretical study
Publication Date : 31/10/2017
Among all magnetic semiconductors, GaMnAs seems to be the most important one. In this work we present a comprehensive, accurate up to date compilation of GaMnAs band parameters at zero temperature using the k.p method based on complete and consistent parameter sets. Due to the magnetic aspect of GaMnAs, we have studied the effect of manganese on the structure band by varying the Mn concentration range and the strain as well. Furthermore, we have calculated the energy gap and the heavy holes effective masses. The results show that by increasing the strain and Mn composition, the energy gap decreases which agree well with the most recent studies.
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