Effect of physical and geometrical parameters on electrical characteristics of AlGaN/GaN HEMTs
Publication Date : 25/10/2017
This work reported the design and the development of a physical simulation model of AlGaN/GaN High Electron Mobility Transistor (HEMTs). Our main aim was to ascertain the influence of technological parameters (the gate length, the AlGaN layer thickness, and doping concentration (Nd)) on the drain-source current Ids [Vds, Vgs], the Ids-Vgs characteristics and the transconductance gm by using a commercial software Comsol Multiphysics version. 5.1. On the other hand, this work was strengthened by the experimental data that confirmed the validity of the present model.
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