International Journal of Recent Trends in Engineering & Research

online ISSN

EXPERIMENTAL INVESTIGATION FOR DETERMINING HEALTH STATE OF GAN TRANSISTORS

Publication Date : 28/01/2019

DOI : 10.23883/IJRTER.2019.5005.KTQ3Y


Author(s) :

J. I. Uba , A. Odejayi , C.Kim.


Volume/Issue :
Volume 5
,
Issue 1
(01 - 2019)



Abstract :

Abstract This paper explores the feasibility of using surface measurable parameters to track degradation of Gallium Nitride (GaN) field effect transistor (FET) installed and operational on a circuit board. To validate the premise, a preliminary investigation, focused on magnetic field of the bulk of the transistor as well as drain source voltage and dynamic on-state resistance, is performed. A sustained 57% increase in on state resistance of stressed transistors over their unstressed counterparts in a DC DC converter circuit in the absence of stressing voltage, indicated irreversible change in material properties of the constituent semiconductor. This change is also manifested in the positive shift of magnetic field strength. The magnetic field of the bulk thus are found to be a viable degradation marker and so are permittivity and permeability with equal possibility, which, with further in-depth study, could lead to a robust model for real time tracking of degradation in circuit active GaN FETs


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